器件名称:
5SMY12H1200
功能描述:
IGBT-Die
文件大小:
66.97KB 共5页
简 介:
VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1200 Die size: 9.1 x 9.1 mm Doc. No. 5SYA1638-01 Sep 06 Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C min max 1200 57 114 Unit V A A V s °C -20 20 10 -40 150 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMY 12H1200 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 600 V, IC = 57 A, RG = 18 , VGE = ±15 V, Lσ = 60 nH, inductive load VCC = 600 V, IC = 57 A, RG = 18 , VGE = ±15 V, Lσ = 60 nH, inductive load VCC = 600 V, IC = 57 A, VGE = ±15 V, RG = 18 , Lσ = 60 nH, inductive load, FWD: 5SLX 12E1200 VCC = 600 V, IC = 57 A, VG……
