器件名称:
5STB18U6500
功能描述:
Bi-Directional Control Thyristor
文件大小:
425.36KB 共5页
简 介:
VSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1580 A 2480 A 29700 A 1.2 V 0.458 m Bi-Directional Control Thyristor 5STB 18U6500 Doc. No. 5SYA1037-02 Apr. 02 Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate. The electrical and thermal data are valid for one thyristor half of the device. Blocking Maximum rated values Symbol VSM VRM IRM dV/dtcrit Conditions f = 5 Hz, tp = 10ms f = 50 Hz, tp = 10ms VRM, Tj = 110°C Exp. to 0.67 x VDRM, Tj = 110°C 5STB 18U6500 5STB 18U6200 5STB 18U5800 6500 V 5600 V 6200 V 5300 V ≤ 600 mA 2000 V/s 5800 V 4900 V Mechanical data Parameter Mounting force Acceleration Acceleration Weight Surface creepage distance Air strike distance Symbol Conditions FM a a m DS Da 53 22 Device unclamped Device clamped 3.6 min 120 typ. 135 max 160 50 100 Unit kN m/s m/s kg mm mm 2 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STB 18U6500 On-state Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral On-state voltage Threshold voltage Slope resistance Holding current Symbol Conditions ITAVM Half sine wave, Tc = 70°C min 1580 2480 tp = 10 ms, Tj = 110°C, V = VR=0 V tp = 8.3 ms, Tj = 110°C, V = VR=0 V IT = 1600 A, Tj= 110°C IT = 1000 A - 3……
