器件名称:
5STB25U5200
功能描述:
Bi-Directional Control ThyristorBi-Directional Control Thyristor
文件大小:
436.87KB 共6页
简 介:
VSM IT(AV)M IT(RMS) ITSM VT0 rT = = = = = = 5200 V 1980 A 3100 A 42×10 A 1.06 V 0.219 m Bi-Directional Control Thyristor 5STB 25U5200 Preliminary Doc. No. 5SYA1038-02 Jul. 03 Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for energy and industrial applications Optimum power handling capability Interdigitated amplifying gate. The electrical and thermal data are valid for one thyristor half of the device. Blocking Maximum rated values 1) Symbol VSM VRM dV/dtcrit Parameter Conditions f = 5 Hz, tp = 10 ms f = 50 Hz, tp = 10 ms Exp. to 0.67 x VRM, Tvj = 110°C Symbol Conditions 5STB 25U5200 5200 V 4400 V 5STB 25U5000 5STB 25U4600 5000 V 4200 V 2000 V/s min typ max 400 Unit mA 4600 V 4000 V Characteristic values Max. leakage current IRM VRM, Tvj = 110°C VRM is equal to the VSM value up to Tj = 95 °C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 120 typ 135 max 160 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter Weight Surface creepage distance Symbol Conditions m DS min 53 typ max 3.6 Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STB 25U5200 On-state Maximum rated values 1) Parameter Average on-state current RMS on-……
