器件名称:
5STP06D2800
功能描述:
Phase Control Thyristor
文件大小:
260.91KB 共5页
简 介:
VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 620 A 970 A 8000 A 0.92 V 0.780 m Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-04 Sep. 01 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking Part Number VDRM VRSM1 IDRM IRRM dV/dtcrit VRRM 5STP 06D2800 5STP 06D2600 5STP 06D2200 Conditions 2800 V 3000 V 2600 V 2800 V ≤ 100 mA ≤ 100 mA 1000 V/s 2200 V 2400 V f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDRM VRRM Tj = 125°C Exp. to 0.67 x VDRM, Tj = 125°C Mechanical data FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 0.3 kg 25 mm 14 mm 10 kN 8 kN 12 kN ABB Semiconductors AG reserves the right to change specifications without notice. 5STP 06D2800 On-state ITAVM ITRMS ITSM It 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 620 A 970 A 8000 A 8500 A 2 2 Half sine wave, TC = 70°C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 1000 A 333 - 1000 A Tj = 125°C Tj = 125°C After surge: VD = VR = 0V 320 kA s tp = 300 kA s tp = VT VT0 rT IH IL On-state voltage Threshold voltage Slope resistance Holding current 1.70 V 0.92 V 0.780 m 20-70 mA 10-50 mA IT = IT = Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Latching current 80-500 mA 50-200 mA Switching di/dtcrit Critical……
