器件名称:
5STP18H4200
功能描述:
Phase Control Thyristor
文件大小:
226.8KB 共6页
简 介:
VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 2075 A 3260 A 32000 A 0.96 V 0.285 m Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA1046-02 Jan. 02 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol VDRM, VRRM VRSM1 dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.67 x VDRM, Tj = 125°C 5STP 18H4200 5STP 18H4000 5STP 18H3600 4200 V 4600 V 4000 V 4400 V 1000 V/s min typ max 300 300 Unit mA mA 3600 V 4000 V Characteristic values Symbol Conditions IDRM IRRM VDRM, Tj = 125°C VRRM, Tj = 125°C Forwarde leakage current Reverse leakage current Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 45 typ 50 max 60 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter Weight Surface creepage distance Air strike distance Symbol Conditions m DS Da min 36 15 typ 0.9 max 1) Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 18H4200 On-state Maximum rated values 1) Parameter Max. average on-state current RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. ……