器件名称:
5STP33L2600
功能描述:
Phase Control Thyristor
文件大小:
321.53KB 共6页
简 介:
VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 3740 A 5880 A 60000 A 0.95 V 0.1 m Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA1011-03 Jan. 02 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol VDRM, VRRM VRSM1 dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.67 x VDRM, Tj = 125°C 5STP 33L2800 2800 V 3000 V 5STP 33L2600 2600 V 2800 V 1000 V/s min typ 5STP 33L2200 2200 V 2400 V Characteristic values Symbol Conditions IDRM IRRM VDRM, Tj = 125°C VRRM, Tj = 125°C max 400 400 Unit mA mA Forwarde leakage current Reverse leakage current Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 63 typ 70 max 84 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter Weight Surface creepage distance Air strike distance Symbol Conditions m DS Da min 36 15 typ 1.45 max 1) Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 33L2800 On-state Maximum rated values 1) Parameter Max. average on-state current RMS on-state current Max. peak non-repetitive surge current Limiting load integral Ma……
