器件名称:
CHA2266-99F/00
功能描述:
12.5-17GHz Low-Noise Driver Amplifier
文件大小:
124.94KB 共7页
简 介:
CHA2266 12.5-17GHz Low-Noise Driver Amplifier GaAs Monolithic Microwave IC Description VD 1 The CHA2266 is a self biased, low-noise high gain driver amplifier. It is designed mainly for VSAT applications in Ku-band. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured on a standard GaAs PHEMT process, with via holes through the substrate, air bridges and electron beam gate lithography. VD 2 IN OUT Main Features 40 Typical on wafer measurements Typical CHA2266 ( Vds = 4V, Ids = 130mA ) 35 Broad band performance 12.5–17GHz 2.5dB noise figure 34dB gain, +/- 0.5dB gain flatness Low DC power consumption:130mA Saturated output power : 16dBm Chip size 2.32 x 1.02 x 0.1mm 30 25 Gain & Returnloss / dB 20 15 10 5 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 4.1 2.9 2.5 2.0 1.9 1.6 1.5 1.5 2.2 MS11 MS21 MS22 NF Frequency / GHz Absolute maximum Ratings (1) Symbol Vd Pin Top Tstg Parameter (1) Drain bias voltage Maximum continious input power overdrive Operating temperature range Storage temperature Values 4.3 -15 -40 to +85 -55 to +125 Unit V dBm °C °C (1) Operation of this device above any of these parameters may cause permanent damage. ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22662242 - 30-Aug.-02 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départ……
