器件名称:
CHA3063_08
功能描述:
5.5-23GHz Driver Amplifier
文件大小:
242.85KB 共8页
简 介:
CHA3063 RoHS COMPLIANT 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounded.This helps to simplify the assembly process. The circuit is manufactured with a pHemt process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Feature 24 20 Gain Rlosses & NF ( dB ) dBS21 Broadband performance 5.5-23GHz 21dBm output power (Psat) 19dB gain, ± 1dB gain flatness Typical PAE:11%@P-1dB Chip size : 1.33 x 0.910x 0.1mm 16 12 8 NF 4 0 -4 -8 dBS11 dBS22 -12 -16 -20 -24 2 4 6 8 10 12 14 16 18 20 22 24 Frequency ( GHz ) Typical On wafer measurements Main Characteristics Tamb = +25° C Symbol Fop G Pout Parameter Operating frequency range Small signal gain Output power, Pin=0dBm Min 5.5 18 +18 19 +20 160 210 Typ Max 23 Unit GHz dB dBm mA Id_small_signal Bias current ESD Protection : Electrostatic discharge sensitive device observe handling precautions ! Ref : DSCHA3063-8144 - 23 May 08 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3063 Electrical Characteristics on wafer 5.5-23GHz Driver Amplifier Tamb = +25° C, Vd1=Vd2=4V Vg tuned for Id=160mA (around –0.27V) Symbol Fop G Parameter Op……
