器件名称:
CHA5295
功能描述:
24.5-26.5GHz High Power Amplifier
文件大小:
155.6KB 共8页
简 介:
CHA5295 24.5-26.5GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5295 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 32 30 Vd1 Vd2 Vg3 Vd3 Vg1 Vg2 Vd2 Vg3 Vd3 Main Features ■ Performances : 24.5-26.5GHz ■ 30dBm output power @ 1dB comp. ■ 17 dB ± 1dB gain ■ DC power consumption, 800mA @ 6V ■ Chip size : 4.01 x 2.52 x 0.05 mm 28 26 24 22 20 18 16 14 12 10 24 24,5 25 25,5 26 26,5 Frequency (GHz) P-1dB (dBm) Linear Gain (dB) PAE (%) Typical on jig Measurements Main Characteristics Tamb. = 25°C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 24.5 16 29 Typ 17 30 800 Max 26.5 Unit GHz dB dBm mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA529522297 -24-Oct.-02 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5295 Electrical Characteristics Tamb = +25°C, Vd = 6V ……
