器件名称:
2N6796
功能描述:
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
文件大小:
140.76KB 共7页
简 介:
2N6796 Data Sheet November 1998 File Number 1594.2 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET The 2N6796 is an N-Channel enhancement mode silicon gate power eld effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Features 8A, 100V rDS(ON) = 0.180 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Ordering Information PART NUMBER 2N6796 PACKAGE TO-205AF BRAND 2N6796 Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 321-724-7143 | Copyright Intersil Corporation 1999 2N6796 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specied 2N6796 100 100 8 5 32 ±20 8 32 25 0.20 -55 to 150 300 260 UNITS V V A A A V A A W W/oC oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .……
