器件名称:
74HCT04
功能描述:
Hex inverter
文件大小:
33.05KB 共5页
简 介:
INTEGRATED CIRCUITS DATA SHEET 74HC04; 74HCT04 Hex inverter Product specication Supersedes data of 1993 Sep 01 2003 Jul 23 Philips Semiconductors Product specication Hex inverter FEATURES Complies with JEDEC standard no. 8-1A ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. Specified from 40 to +85 °C and 40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. DESCRIPTION 74HC04; 74HCT04 The 74HC/HCT04 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT04 provide six inverting buffers. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. For 74HC04: the condition is VI = GND to VCC. For 74HCT04: the condition is VI = GND to VCC 1.5 V. FUNCTION TABLE See note 1. INPUT nA L H Note 1. H = HIGH voltage level; L = LOW voltage level. OUTPUT nY H L PARAMETER propagation delay nA to nY input capacitance power dissipation capacitance per gate notes 1 and 2 CONDITIONS HC04 CL = 15 pF; VCC = 5 V 7 3.5 21 8 3.5 24 HCT04 ns pF pF UNIT 2003 Jul 23 2 Philips Semiconductors Product specication……
