器件名称:
74HCT3G06DC
功能描述:
Inverter with open-drain outputs
文件大小:
90.27KB 共14页
简 介:
INTEGRATED CIRCUITS DATA SHEET 74HC3G06; 74HCT3G06 Inverter with open-drain outputs Product specication Supersedes data of 2003 May 15 2003 Dec 02 Philips Semiconductors Product specication Inverter with open-drain outputs FEATURES Wide supply voltage range from 2.0 to 6.0 V High noise immunity Low power dissipation SOT505-2 and SOT765-1 package ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. Specified from 40 to +85 °C and 40 to +125 °C. DESCRIPTION 74HC3G06; 74HCT3G06 The 74HC3G06/74HCT3G06 is a high-speed Si-gate CMOS device. Specified in compliance with JEDEC standard no. 7A. The 74HC3G06/74HCT3G06 provides three inverting buffers. The outputs of the 74HC3G06; 74HCT3G06 devices are open drains and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. TYPICAL SYMBOL tPZL tPLZ CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. For 74HC3G06 the condition is VI = GND to VCC. For 74HCT3G06 the condition is VI = GND to VCC 1.……
