器件名称:
74HCT3G14DP
功能描述:
Inverting Schmitt-triggers
文件大小:
101.61KB 共20页
简 介:
INTEGRATED CIRCUITS DATA SHEET 74HC3G14; 74HCT3G14 Inverting Schmitt-triggers Product specication Supersedes data of 2002 Jul 23 2003 Nov 04 Philips Semiconductors Product specication Inverting Schmitt-triggers FEATURES Wide supply voltage range from 2.0 to 6.0 V High noise immunity Low power dissipation Balanced propagation delays Unlimited input rise and fall times Very small 8 pins package ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. Specified from 40 to +85 °C and 40 to +125 °C. DESCRIPTION APPLICATIONS 74HC3G14; 74HCT3G14 Wave and pulse shapers for highly noisy environments Astable multivibrators Monostable multivibrators Output capability: standard. The 74HC3G/HCT3G14 is a high-speed Si-gate CMOS device. The 74HC3G/HCT3G14 provides three inverting buffers with Schmitt-trigger action. This device is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. For HC3G14 the condition is VI = GND to VCC. For HCT3G14 the condition is VI = GND to VCC 1.……
