器件名称:
TC2876
功能描述:
5 W Low-Cost Packaged PHEMT GaAs Power FETs
文件大小:
52.5KB 共2页
简 介:
TC2876 REV4_20070507 5 W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES 5 W Typical Output Power at 6 GHz 7 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 47 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 18 V Lg = 0.6 m, Wg = 12 mm Tight Vp ranges control High RF input power handling capability 100 % DC Tested PHOTO ENLARGEMENT Low Cost Ceramic Package DESCRIPTION The TC2876 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol P1dB GL IP3 PAE IDSS gm VP CONDITIONS Output Power at 1dB Gain Compression Point , f = 6 GHz VDS = 8 V, IDS = 1200 mA Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 1200 mA Intercept Point of the 3 -order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 1200 mA, *PSCL = 23 dBm Power Added Efficiency at 1dB Compression Power, f = 6 GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 24 mA 18 rd MIN 36 TYP 36.5 7 47 40 3 2000 -1.7** 22 3.5 MAX UNIT dBm dB dBm % A mS Volts Volts °C/W……
