器件名称:
TC2896
功能描述:
5 W Flange Ceramic Packaged GaAs Power FETs
文件大小:
103.77KB 共4页
简 介:
TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES 5 W Typical Power at 6 GHz 8 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 47 dBm Typical at 6 Ghz High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz Suitable for High Reliability Application Lg = 0.6 m, Wg = 12 mm Tight Vp ranges control High RF input power handling capability 100 % DC and RF Tested PHOTO ENLARGEMENT Flange Ceramic Package DESCRIPTION The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS Symbol P1dB GL IP3 PAE IDSS gm VP Rth CONDITIONS Output Power at 1dB Gain Compression Point, f = 6 GHz VDS = 8 V, IDS = 1200 mA Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 1200 mA Intercept Point of the 3rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 1200 mA, *PSCL = 23 dBm Power Added Efficiency at 1dB Compression Power, f = 6 GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 24 mA 18 MIN 36 TYP 36.5 8 47 40 3 2000 -1.7** 22 2.7 MAX UNIT dBm dB dBm % A mS Volts Volts °C/W BVDGO Drain-Gate Breakdown Voltage at IDGO =6 mA Ther……
