器件名称:
9012LT1
功能描述:
SOT-23 Plastic-Encapsulate Transistors
文件大小:
34.27KB 共1页
简 介:
SHENZHEN ICHN ELECTRONICS TECH. CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT— 23 1. BASE 9012LT1 FEATURES TRANSISTOR（ PNP ） 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified） Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE=-1V, IC=-500mA IC=-500 mA, IB= -50m A IC=-500 mA, IB= -50m A VCE=-6V, I C= -20mA Test conditions IE=0 １．０ ２．４ １．３ ０．９５ ２．９ １．９ ０．９５ ０．４ Unit : mm MIN -40 -25 -5 TYP MAX UNIT V V V Ic= -100μA， Ic= -1mA， IB=0 IE=-100μA， IC=0 VCB=-40 V , IE=0 VCE=-20V , IB=0 VEB= -5V , IC=0 -0.1 -0.1 -0.1 120 40 -0.6 -1.2 150 350 μA μA μA VCE=-1V, IC= -50m A V V MHz fT f=30MHz CLASSIFICATION OF h FE(1) Ｒａｎｋ Ｒａｎｇｅ Ｌ １２０－２００ Ｈ ２００－３５０ DEVICE MARKING: 9012LT1=2T1 HTTP: WWW. SZXC. COM. CN ……
