EEPW首页| 器件索引| 厂商列表| IC替换| 微缩略语| 电路图查询

400万器件资料库等您来搜！

首页>WINGS> 9013

9013

器件名称: 9013

功能描述: NPN SILICON TRANSISTOR

文件大小: 75.8KB 共1页

生产厂商: WINGS

下　　载:

在线浏览点击下载

简　　介: TO 92 FEATURES 特征 1.EMITTER 发射极 Power dissipation PCM : 0.625 Collector current ICM : 0.5 Collector-base voltage V(BR)CBO : 45 最大耗散功率 2.BASE W A Tamb=25 基极 3.COLLECTOR 最大集电极电流集电极 1 2 3 集电极--基极击穿电压 V ELECTRICAL CHARACTERISTICS 电 Parameter 参数 Collector-base breakdown voltage 集电极 - - 基极击穿电压 Collector-emitter breakdown voltage 集电极 - - 发射极击穿电压 Emitter-base breakdown voltage 发射极 - - 基极击穿电压 Collector cut-off current 集电极--基极截止电流 Collector cut-off current 集电极--发射极截止电流 Emitter cut-off current 发射极--基极截止电流 Tamb=25 环境温度 Symbol 符号 unless otherwise specified 除非另有 MIN 最小值特性规定 MAX 最大值 UNIT 单位 Test conditions 测试条件 TYP 典型值 V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE HFE 1 Ic= 100 A IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC= 50 mA IC =500 mA 45 25 5 0.1 0.1 0.1 64 40 0.6 1.2 1.4 300 V V V A A A Ic= 0. 1 mA IE= 100 VCB= 40 VCE= 20 VEB= VCE= VCE= 5 A V V V DC current gain(note) 直流电流增益 1 V, 1V, 2 Collector-emitter saturation voltage 集电极 - - 发射极饱和压降 Base-emitter saturation voltage 基极--发射极饱和压降 Base-emitter voltage 基极 - - 发射极正向电压 VCE(sat) VBE(sat) VBE IC= 500 mA, IB=50 mA IC= 500mA, IB= 50 mA IE=100mA VCE= 6 V, IC= 20 mA 150 V V V Transition frequency 特征频率 fT 分类 E 78-112 MHz f =30MHz CLASSIFICATION OF HFE(1) Rank 档次 Range 范围 D 64-91 F 96-135 G 112-166 H 144-220 I 190-300 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: ws……

相关电子器件

器件名功能描述生产厂商

90130-3230 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Right Angle, Shrouded, Fully Loaded, 30 Circuits, Black 0.38μm (15μ) Gold (Au) Selective Plating MOLEX

90136-1304 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Vertical, Shrouded, 4 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating MOLEX

90130-1140 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 40 Circuits, Black, 3μm (118μ) Tin (Sn) over Nickel (Ni) MOLEX

90136-1218 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Vertical, Shrouded, 18 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating MOLEX

90130-1124 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 24 Circuits, Black, 3μm (118μ) Tin (Sn) over Nickel (Ni) MOLEX

90136-1115 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Vertical, Shrouded, 15 Circuits, 4μm (160μ) Tin/Lead (Sn) over Nickel (Ni) MOLEX

90130-1210 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 10 Circuits, Black, 0.38μm (15μ) Gold (Au) Selective Plating MOLEX

90130-1350 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 50 Circuits, Black, 0.76μm (30μ) Gold (Au) Selective Plating MOLEX

90136-1308 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Vertical, Shrouded, 8 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating MOLEX

90136-1104 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Vertical, Shrouded, 4 Circuits, 4μm (160μ) Tin/Lead (Sn) over Nickel (Ni) MOLEX

90130-3122 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Right Angle, Shrouded, Fully Loaded, 22 Circuits, Black, 3μm (118μ) Tin (Sn) over Nickel (Ni) MOLEX

90136-1114 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Vertical, Shrouded, 14 Circuits, 4μm (160μ) Tin/Lead (Sn) over Nickel (Ni) MOLEX

90130-3338 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Right Angle, Shrouded, Fully Loaded, 38 Circuits, Black 0.76μm (30μ) Gold (Au) Selective Plating MOLEX

90130-3106 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Right Angle, Shrouded, Fully Loaded, 6 Circuits, Black, 3μm (118μ) Tin (Sn) over Nickel (Ni) MOLEX

90131-0788 2.54mm (.100") Pitch C-Grid III Header, Dual Row, Vertical, with Kinked PC Tail, 56 Circuits, 0.38um MOLEX

90130-1138 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 38 Circuits, Black, 3μm (118μ) Tin (Sn) over Nickel (Ni) MOLEX

90130-3330 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Right Angle, Shrouded, Fully Loaded, 30 Circuits, Black 0.76μm (30μ) Gold (Au) Selective Plating MOLEX

90131-0768 2.54mm (.100") Pitch C-Grid III Header, Dual Row, Vertical, with Kinked PC Tail, 16 Circuits MOLEX

90130-3320 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Right Angle, Shrouded, Fully Loaded, 20 Circuits, Black 0.76μm (30μ) Gold (Au) Selective Plating MOLEX

90130-1150 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 50 Circuits, Black, 3μm (118μ) Tin (Sn) over Nickel (Ni) MOLEX

90136-2302 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Right Angle, Shrouded, 2 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating MOLEX

90136-2104 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Right Angle, Shrouded, 4 Circuits, 4μm (160μ) Tin/Lead (Sn) over Nickel (Ni) MOLEX

90130-1320 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 20 Circuits, Black, 0.76μm (30μ) Gold (Au) Selective Plating MOLEX

90136-2209 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Right Angle, Shrouded, 9 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating MOLEX

90131-0135 2.54mm (.100") Pitch C-Grid III Header, Dual Row, Vertical, with Kinked PC Tail, 60 Circuits MOLEX

90136-1212 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Vertical, Shrouded, 12 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating MOLEX

90136-1220 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Vertical, Shrouded, 20 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating MOLEX

90130-1108 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 8 Circuits, Black, 3μm (118μ) Tin (Sn) over Nickel (Ni) MOLEX

90136-2315 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Right Angle, Shrouded, 15 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating MOLEX

90130-1316 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 16 Circuits, Black, 0.76μm (30μ) Gold (Au) Selective Plating MOLEX

90130-1134 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 34 Circuits, Black, 3μm (118μ) Tin (Sn) over Nickel (Ni) MOLEX

90136-1230 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Vertical, Shrouded, 30 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating MOLEX

90130-1254 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 54 Circuits, Black, 0.38μm (15μ) Gold (Au) Selective Plating MOLEX

90130-1240 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 40 Circuits, Black, 0.38μm (15μ) Gold (Au) Selective Plating MOLEX

90131-0927 2.54mm (.100") Pitch C-Grid III Header, Dual Row, Vertical, with Kinked PC Tail, 14 Circuits, 0.76μm (30u") Gold (Au) MOLEX

90130-1222 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Vertical, Shrouded, Fully Loaded, 22 Circuits, Black, 0.38μm (15μ) Gold (Au) Selective Plating MOLEX

90136-1306 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Vertical, Shrouded, 6 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating MOLEX

90130-3308 2.54mm (.100) Pitch C-Grid III™ Header, Dual Row, Right Angle, Shrouded, Fully Loaded, 8 Circuits, Black 0.76μm (30μ) Gold (Au) Selective Plating MOLEX

90136-2208 2.54mm (.100) Pitch C-Grid III™ Header, Single Row, Right Angle, Shrouded, 8 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating MOLEX

9013 TO-92 Plastic-Encapsulate Transistors DAYA

90139 1000V CERAMIC DISC NTE

90133 1000V CERAMIC DISC NTE

9013 NPN SILICON TRANSISTOR WINGS

《电子产品世界》杂志社版权所有北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2