器件名称: 9014B
功能描述: Silicon NPN Epitaxial Transistor
文件大小: 163.4KB 共1页
简 介:9014B 9014B Silicon NPN Epitaxial Transistor Description :The 9014B is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9015B Chip Appearance
Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 350um×350um 210±20um 110um×110um 100um×100um Al Au(As) 40um 6 inch
Electrical Characteristics( Ta=25℃)
Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=40V, IE=0 VEB=5V, IC=0 IC=0.1mA, IC=1mA, IE=0.1mA, VCE=5V, IC=1mA IC=100mA,IB=5mA 50 45 5.0 150 600 0.30 V Min Max 0.1 0.1 Unit uA uA V V V
May.2004
Version :0.0
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