器件名称:
AS29LV800B-120TC
功能描述:
3V 1M
文件大小:
463.83KB 共25页
简 介:
March 2001 AS29LV800 3V 1M × 8/512K × 16 CMOS Flash EEPROM Features Organization: 1M×8/512K×16 Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture—T (top) or B (bottom) - Erase any combination of sectors or full chip Single 2.7-3.6V power supply for read/write operations Sector protection High speed 70/80/90/120 ns address access time Automated on-chip programming algorithm - Automatically programs/verifies data at specified address Automated on-chip erase algorithm - Automatically preprograms/erases chip or specified sectors Hardware RESET pin - Resets internal state machine to read mode Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current JEDEC standard software, packages and pinouts - 48-pin TSOP - 44-pin SO; availability TBD Detection of program/erase cycle completion - DQ7 DATA polling - DQ6 toggle bit - DQ2 toggle bit - RY/BY output Erase suspend/resume - Supports reading data from or programming data to a sector not being erased Low VCC write lock-out below 1.5V 10 year data retention at 150C 100,000 write/erase cycle endurance Logic block diagram RY/BY VCC VSS RESET Program/erase control Command register CE OE A-1 Program voltage generator Chip enable Output enable Logic STB Data latch Sector protect/ erase voltage switches Erase voltage generator DQ0–DQ15 Pin a……
