器件名称:
BH616UV1611BIP70
功能描述:
Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit
文件大小:
149.64KB 共12页
简 介:
Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit Pb-Free and Green package materials are compliant to RoHS BH616UV1611 n FEATURES Wide VCC low operation voltage : 1.65V ~ 3.6V Ultra low power consumption : VCC = 3.6V Operation current : 10mA (Max.) at 55ns 2mA (Max.) at 1MHz Standby current : 5.0uA (Typ.) at 3.0V/25OC VCC = 1.2V Data retention current : 1.5uA(Typ.) at 25OC High speed access time : -55 55ns (Max.) at VCC=1.65~3.6V -70 70ns (Max.) at VCC=1.65~3.6V Automatic power down when chip is deselected Easy expansion with CE1, CE2 and OE options I/O Configuration x8/x16 selectable by LB and UB pin. Three state outputs and TTL compatible Fully static operation, no clock, no refresh Data retention supply voltage as low as 1.0V n DESCRIPTION The BH616UV1611 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.0V/25OC and maximum access time of 55ns at 1.65V/85OC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BH616UV1611 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BH616UV1611 is available in DICE form, ……
