器件名称:
BH62UV4000TIG55
功能描述:
Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit
文件大小:
397.53KB 共12页
简 介:
Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit Green package materials are compliant to RoHS BH62UV4000 n FEATURES Wide VCC low operation voltage : 1.65V ~ 3.6V Ultra low power consumption : VCC = 3.6V Operation current : 10mA (Max.)at 55ns 2mA (Max.) at 1MHz Standby current : 2.0uA (Typ.) at 3.0V/25OC VCC = 1.2V Data retention current : 1.0uA at 25OC High speed access time : -55 55ns (Max.) at VCC=1.65~3.6V Automatic power down when chip is deselected Easy expansion with CE and OE options Three state outputs and TTL compatible Fully static operation, no clock, no refresh Data retention supply voltage as low as 1.0V n DESCRIPTION The BH62UV4000 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 by 8 bits and operates in a wide range of 1.65V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at 1.65V/85OC. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers. The BH62UV4000 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BH62UV4000 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 400mil TSOP-II, 600mil Plastic DIP, 8mmx13.4mm STSOP, 8mmx20mm TSOP and 36-ball BGA package. n POWER CONSUMPTION POWER DISSI……
