器件名称:
BS616UV4020DC
功能描述:
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
文件大小:
212.05KB 共11页
简 介:
BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable DESCRIPTION BS616UV4020 Ultra low operation voltage : 1.8 ~ 3.6V Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating current 0.2uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc=2.0V -10 100ns (Max.) at Vcc=2.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616UV4020 is a high performance, ultra low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.2uA and maximum access time of 70/100ns in 2V operation. Easy memory expansion is provided by active HIGH chip enable2(CE2), active LOW chip enable1(CE1), active LOW output enable(OE) and three-state output drivers. The BS616UV4020 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616……
