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BS62LV1023

器件名称: BS62LV1023
功能描述: Very Low Power/Voltage CMOS SRAM 128K X 8 bit
文件大小: 378.75KB    共11页
生产厂商: BSI
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简　　介:BSI FEATURES Very Low Power/Voltage CMOS SRAM 128K X 8 bit DESCRIPTION BS62LV1023 Vcc operation voltage : 2.4V ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max.) operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 3.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE2, CE1, and OE options PRODUCT FAMILY PRODUCT FAMILY BS62LV1023SC BS62LV1023TC BS62LV1023STC BS62LV1023PC BS62LV1023JC BS62LV1023DC BS62LV1023SI BS62LV1023TI BS62LV1023STI BS62LV1023PI BS62LV1023JI BS62LV1023DI OPERATING TEMPERATURE Vcc RANGE The BS62LV1023 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.02uA and maximum access time of 70ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV1023 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV1023 is available in DICE form, JEDEC standard 32 pin 450mil……
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