器件名称:
AD4016M161RPB-5
功能描述:
Low voltage operation is more suitable to be used on battery backup, portable electronic
文件大小:
211.22KB 共28页
简 介:
ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16 Mega Bits 8M : 8 Mega Bits 4M : 4 Mega Bits 2M : 2 Mega Bits 1M : 1 Mega Bit Organization 4: x4 8 : x8 9 : x9 16 : x16 18 : x18 32 : x32 Refresh 1 : 1K 8 : 8K 2 : 2K 6 :16K 4 : 4K Min Cycle Time ( Max Freq.) -5 : 5ns ( 200MHz ) -6 : 6ns ( 167MHz ) -7 : 7ns ( 143MHz ) -75 : 7.5ns ( 133MHz ) -8 : 8ns ( 125MHz ) -10 : 10ns ( 100MHz ) EDO : -5 (50 ns) -6 (60 ns) Revision A : 1st B : 2nd C : 3rd D :4th Interface V: 3.3V R: 2.5V Package C: CSP B: uBGA T: TSOP Q: TQFP P: PQFP ( QFP ) L: LQFP S: SOJ Rev.1 Page 2 Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. lt is packaged in JEDEC standard 26/24-pin plastic SOJ or TSOP(II). Features Single 3.3V( ± 10 %) only power supply High speed tRAC acess time: 50/60ns Low power dissipation - Active mode : 432/396 mW (Mas) - Standby mode: 0.54 mW (Mas) Extended - data - out(EDO) page mode access I/O level: CMOS level (Vcc = 3.3V) 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version) 4 refresh modesh: - RAS only refresh - CAS - before - RAS refr……
