器件名称:
AD500-9
功能描述:
Avalanche Photodiode NIR
文件大小:
215.52KB 共2页
简 介:
AD500-9 TO52S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency > 80 % at λ 760 - 910 nm high speed, low noise 500 m diameter active area low slope multiplication curve Parameters: Active Area Dark Current 1) (M = 100) Total Capacitance 1) (M = 100) Breakdown Voltage UBR (at ID = 2 A) Temperature Coefficient of UBR Spectral Responsivity 1) (at 905 nm, M = 100) Cut-off Frequency (-3dB) Rise Time Optimum Gain Max. Gain “Excess Noise” factor (M = 100) “Excess Noise” index (M = 100) Noise Current (M = 100) N.E.P. (M = 100, 905 nm) Operating Temperature Storage Temperature AD500-9 TO52S1 0.196 mm2 500 m max. 5 nA typ. 0.5 - 1 nA typ. 1.2 pF 120 … 300 V typ. > 200 V typ. 1.55 V/K min. 55 A/W typ. 60 A/W typ. 0.5 GHz typ. 550 ps 50 - 60 > 200 Package (TO52S1): CASE 4 3 1 45° ANODE 2.54 5.4 ± 0.2 CATHODE 4.7 ± 0.1 0.9 ± 0.3 2.0 min. 3.6 ± 0.2 sensitive surface typ. 2.5 typ. 0.2 typ. 1 pA/Hz1/2 typ. 2* 10 W/Hz -20 ... +70 °C -60 ... +100 °C -14 1/2 2.7 ± 0.2 0.5 max. 0.4 max. 0.45 Chip: AD500-9 diam. active area: 100 m 1) measurement conditions: Setup of photo current 10 nA at M = 1 and irradiation by an IRED (880 nm, 80 nm bandwith). Increase the photo current up to 1 A, (M = 100) by internal multiplication due to an increasing bias voltage. 3 1 view without window cap 4 www.silicon-sensor.com Version: 05-04-29 Specification before: SSO-AD-500-9-TO52-S1 www.pacific-sensor.com 13 ± 1.0 0.35 ± 0.2 3.0 ± 0.1 Spectral Responsivity at M……
