器件名称:
F49L160BA-70T
功能描述:
16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
文件大小:
434.36KB 共51页
简 介:
ESMT F49L160UA/F49L160BA 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory 1. FEATURES z z z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands compatible with single-power supply Flash z Low power consumption - 7mA typical active current - 25uA typical standby current z 100,000 program/erase cycles typically z 20 Years Data Retention z Command register architecture - Byte Word Programming (9μs/11μs typical) - Byte Mode : One 16KB, two 8KB, one 32KB, and thirty-one 64KB sectors. - Word Mode : one 8K word, two 4K word, one 16K word, and thirty-one 32 K word sectors. z Auto Erase (chip & sector) and Auto Program - Any combination of sectors can be erased concurrently; Chip erase also provided. - Automatically program and verify data at specified address z Erase Suspend/Erase Resume - Suspend or Resume erasing sectors to allow the read/program in another sector z z z z z z z Ready/Busy (RY/ BY ) - RY/ BY output pin for detection of program or erase operation completion End of program or erase detection - Data polling - Toggle bits Hardware reset - Hardware pin( RESET ) resets the internal state machine to the read mode Sector Protection /Unprotection - Hardware Protect/Unprotect any combination of sectors from a program or erase operation. Low VCC Write inhibit is equal to or less than 2.0V Boot Sector Architecture - U = Upper Boot……
