器件名称:
F49L800BA-90T
功能描述:
8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
文件大小:
416.34KB 共47页
简 介:
ESMT F49L800UA/F49L800BA 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory 1. FEATURES z z z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z 1,048,576x8 / 524,288x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands compatible with single-power supply Flash z Low power consumption - 7mA typical active current - 25uA typical standby current z 100,000 program/erase cycles typically z 20 years data retention z Command register architecture - Byte programming (9us typical) - Sector Erase(sector structure: one 16 KB, two 8 KB, one 32 KB, and fifteen 64 KB) z Auto Erase (chip & sector) and Auto Program - Any combination of sectors can be erased concurrently; Chip erase also provided. - Automatically program and verify data at specified address z Erase Suspend/Erase Resume - Suspend or Resume erasing sectors to allow the read/program in another sector z z z z z z Ready/Busy (RY/ BY ) - RY/ BY output pin for detection of program or erase operation completion End of program or erase detection - Data polling - Toggle bits Hardware reset - Hardware pin( RESET ) resets the internal state machine to the read mode Sector Protection /Unprotection - Hardware Protect/Unprotect any combination of sectors from a program or erase operation. Low VCC Write inhibit is equal to or less than 2.0V Boot Sector Architecture - U = Upper Boot Block - B = Bottom Boot Block Packages available: - 48-pin TSOPI 2. ORDERING INFORMATION……
