器件名称:
Am29DL400BB-120SI
功能描述:
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
文件大小:
534.88KB 共42页
简 介:
PRELIMINARY Am29DL400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS s Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Zero latency between read and write operations — Read-while-erase — Read-while-program s Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications s Manufactured on 0.35 m process technology s High performance — Access times as fast as 70 ns s Low current consumption (typical values at 5 MHz) — 7 mA active read current — 21 mA active read-while-program or read-whileerase current — 17 mA active program-while-erase-suspended current — 200 nA in standby mode — 200 nA in automatic sleep mode — Standard tCE chip enable access time applies to transition from automatic sleep mode to active mode s Flexible sector architecture — Two 16 Kword, two 8 Kword, four 4 Kword, and six 32 Kword sectors in word mode — Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and six 64 Kbyte sectors in byte mode — Any combination of sectors can be erased — Supports full chip erase s Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences s Sector protection — Hardware method of locking a sector to prevent any program or erase operation within that sector — Sectors can be locked in-system or via programming equipmen……
