器件名称: ST93C57CB1013TR
功能描述: 2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM
文件大小: 108.25KB 共13页
简 介:ST93C56, 56C ST93C57C
2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST93C56 version – 3V to 5.5V for ST93C57 version SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93C56, ST93C56C, ST93C57C are replaced by the M93C56 DESCRIPTION This specification covers a range of 2K bit serial EEPROM products, the ST93C56, 56C specified at 5V ± 10% and the ST93C57C specified at 3V to 5.5V. In the text, products are referred to as ST93C56. The ST93C56 is a 2K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High EnduranceSingle Polysilicon CMOS technology. The memory is accessed through a serial input (D) and output (Q). The 2K bit memory is divided into either 256 x 8 bit bytes or 128 x 16 bit words. The organization may be selected by a signal applied on the ORG input. Table 1. Signal Names
S D Q C ORG VCC VSS Chip Select Input Serial Data Input Serial Data Output Serial Clock Organisation Select Supply Voltage Ground
8 1
PSDIP8 (B) 0.4mm Frame
8 1
SO8 (M) 150mil Width
Figure 1. Logic Diagram
VCC
D C S ORG ST93C56 ST93C57
Q
VSS
AI00881C
June 1997
This is information on a product still in production bu t not recommended for new de signs.
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