器件名称:
BA283
功能描述:
Silicon Planar Diodes
文件大小:
34.33KB 共3页
简 介:
BA282.BA283 Vishay Telefunken Silicon Planar Diodes Features D Low differential forward resistance D Low diode capacitance D High reverse impedance Applications 94 9367 Band switching in VHF–tuners Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 35 100 150 –55...+150 Unit V mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 350 Unit K/W Document Number 85526 Rev. 2, 01-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (3) BA282.BA283 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Test Conditions IF=100mA VR=20 V f=100MHz, VR=1V f=100MHz, VR=3V f=200MHz, IF=3mA f=200MHz, IF=10mA Reverse impedance f=100MHz, VR=1V Type Symbol VF IR CD CD CD rf rf rf rf zr Min Typ Max 1 50 1.5 1.25 1.2 0.7 1.2 0.5 0.9 Unit V nA pF pF pF Differential forward resistance BA282 BA283 BA282 BA283 BA282 BA283 100 W W W W kW Characteristics (Tj = 25_C unless otherwise specified) rf – Differential Forward Resistance (W ) 100 CD – Diode Capacitance ( pF ) f = 200 MHz Tj = 25°C 10 BA 283 1 3.0 2.5 2.0 1.5 1.0 BA 283 0.5 0 0.1 94 9072 f = 100 MHz Tj = 25°C BA 282 BA 282 0.1 1 10 100 94 9073 0.1 1 10 100 IF – Forward Current ( mA ) VR – Reverse Voltage ( V ) Figure 1. Differential Forward Resistance vs. Forward Current Fig……
