器件名称:
BAT114-099R
功能描述:
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators)
文件大小:
46.93KB 共3页
简 介:
Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features High barrier diode for double balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type BAT 114-099R Marking 14s Ordering Code (taped) Q62702-A1006 Pin Configuration Package1) SOT-143 1) Dimensions see chapter Package Outlines Maximum Ratings (per diode) Parameter Forward current Operation temperature Storage temperature Power dissipation, TS ≤ 70 °C Symbol Limit Values 90 55 to + 150 55 to + 150 100 Unit mA °C °C mW IF Top Tstg Ptot Semiconductor Group 1 02.96 BAT 114-099R Thermal Resistance (per diode) Parameter Junction to soldering point Junction to ambient1) 1) Symbol Limit Values ≤ 780 ≤ 1020 Unit K/W K/W RthJS RthJA Mounted on alumina 15 mm × 16.7 mm to 0.7 mm Electrical Characteristics (per diode; TA = 25 °C) Parameter Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching1) IF = 10 mA Diode capacitance VR = 0 V, f = 1 MHz Forward resistance IF = 10 mA / 50 mA 1) Symbol Limit Values min. typ. max. Unit V VF VF 0.58 0.68 0.25 5.5 0.7 0.78 mV 20 pF CT RF VF is difference between lowest and highest VF in component. Semiconductor Group 2 BAT 114-099R Forward Current IF = f(VF) Semiconductor Group 3 ……
