器件名称:
BAT14-03W
功能描述:
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance)
文件大小:
36.47KB 共4页
简 介:
BAT 14-03W Silicon Schottky Diode DBS mixer application to 12GHz Medium barrier type Low capacitance ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Q62702-A1103 Pin Configuration 1=A 2=C Package SOD-323 BAT 14-03W O/white Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Total power dissipation Thermal Resistance Junction ambient 1) Symbol Values 4 90 - 55 ... + 150 100 Unit V mA VR IF Top Tstg TS ≤ 85°C Ptot ≤ 450 ≤ 690 - 55 ... + 125 °C mW RthJA RthJS K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Mar-01-1996 BAT 14-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit V(BR) 4 0.43 0.55 0.22 5.5 0.52 0.66 V I(BR) = 5 A Forward voltage VF 0.36 0.48 IF = 1 mA IF = 10 mA Diode capacitance CT 0.35 pF - VR = 0 , f = 1 MHz Differential forward resistance RF IF 10mA/ 50 mA Diode capacitance CT = f (VR) f = 1MHz 0.50 pF CT 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V VR 5.0 Semiconductor Group 2 Mar-01-1996 BAT 14-03W Forward current IF = f (VF) Reverse current IR = f (VR) 10 2 mA 10 1 mA IF 10 1 IR 10 0 TA=125°C TA=85°C 10 0 -40°C 25°C 85°C 125°C 10 -1 10 -2 10 -1 TA=25°C 10 -2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ……
