器件名称:
BAT15-020S
功能描述:
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
文件大小:
14.66KB 共2页
简 介:
Silicon Schottky Diodes q q q q BAT 15- … S Beam lead technology Low dimension High performance Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S Maximum Ratings Parameter Symbol Values BAT 15-020 S BAT 15-050 S Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range VR IF Tj Tstg Top 4 100 175 – 65 … + 150 – 65 … + 150 BAT 15-090 S BAT 15-110 S 4 50 V mA C Unit Marking – Ordering Code Q62702-D1262 Q62702-D1271 Q62702-D1279 Q62702-D1288 Pointed cathode Pin Configuration Package1) S 1) For detailed information see chapter Package Outlines. BAT 1515- … ... S BAT Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage IR = 10 A Diode capacitance VR = 0, f = 1 MHz BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S VF BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S FSSB – – – – rf BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S – – – – 3.5 4.0 7.0 10.0 – – – – 6.0 6.5 6.5 7.0 – – – – – – – – – – – – 0.26 0.28 0.30 0.31 0.35 0.39 0.44 0.45 – – – – – – – – dB V(BR) CT – – – – 0.30 0.20 0.14 0.10 0.35 0.25 0.15 0.12 V 4 – – V pF Values typ. max. Unit Forward voltage IF = 1 mA IF = 10 mA Single sideband noise figure FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz f = 3.0 GHz BAT 15-020 S f = 6.0 GHz BAT ……
