器件名称: BAT64-06
功能描述: Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
文件大小: 91.42KB 共3页
简 介:BAT 64 Silicon Schottky Diodes
Preliminary data For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage
Pin Configuration BAT 64-04 BAT64-05 BAT64-06
ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration BAT 64 BAT 64-04 BAT 64-05 BAT 64-06 63s 64s 65s 66s Q62702-A879 Q62702-A961 Q62702-A962 Q62702-A963 1=A 1=A 1=A 1=C 2=C 2=A 2=C 3=C 3 = C/A 3 = C/C 3 = A/A
Package SOT-23 SOT-23 SOT-23 SOT-23
Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t ≤ 10ms) Total Power dissipation Symbol Values 40 250 120 800 mW 250 150 - 55 ... + 150 ≤ 495 ≤ 355 °C Unit V mA
VR IF IFSM Ptot Tj Tstg RthJA RthJS
Average forward current (50/60Hz, sinus) IFAV
TS = 61 °C
Junction temperature Storage temperature Thermal Resistance Junction ambient
1)
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Jan-31-1997
BAT 64
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
IR
320 385 440 570 2 200 350 430 520 750
A
VR = 25 V, TA = 25 °C VR = 25 V, TA = 85 °C
Forward voltage
VF
mV V
IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA
AC Characteristics Diode capacitance
CT
4 6
pF
VR = 1 V, f = 1 MHz
Forward Current IF = f(VF)
Reverse current IR ……
