器件名称: BAT64-07W
功能描述: Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
文件大小: 34.02KB 共3页
简 介:BAT 64-07W
Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BAT 64-07W
Marking Ordering Code 67s Q62702-A3470
Pin Configuration
Package
1 = C1 2 = C2 3 = A2 4 = A1 SOT-343
Maximum Ratings Parameter Diode reverse voltage Forward current Average forward current (50/60Hz, sinus) Surge forward current (t< 100s) Total power dissipation, T S ≤ 104 °C Junction temperature Storage temperature Symbol Value 40 250 120 800 250 150 -55...+150 mW °C Unit V mA
VR IF I FAV I FSM Ptot Tj T stg
Thermal Resistance Junction - ambient
1)
RthJA RthJS
≤455 ≤185
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11
Sep-07-1998 1998-11-01
BAT 64-07W
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 2 200 mV 320 385 440 570 350 430 520 750 A Unit
IR IR VF
-
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
Forward voltage
I F = 1 mA I F = 10 mA I F = 30 mA I F = 100 mA
AC characteristics Diode capacitance
CT
-
4
6
pF
VR = 1 V, f = 1 MHz
Forward current IF = f (V F) Reverse current IR = f (VR)
T A = Parameter
BAT 64... EHB00057
TA = Parameter
BAT 64... EHB00058
ΙF
10 mA
2
ΙR
1
10 2……
