器件名称:
BAT66
功能描述:
Silicon Schottky Diode
文件大小:
421.8KB 共3页
简 介:
BAT66... Silicon Schottky Diode Power rectifier diode For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 4 D 1 D 2 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT66-05 Parameter Package SOT223 Configuration common cathode Symbol VR IF IFSM IFAV Ptot Tj Tstg Symbol RthJS Value Marking BAT66-05 Unit Maximum Ratings at TA = 25°C, unless otherwise specified Diode reverse voltage Forward current Surge forward current, (t 10ms) Average forward current (50/60Hz, sinus) Total power dissipation TS 126°C 30 2 10 1 1.2 150 -55 ... 150 Value V A W °C Junction temperature Storage temperature Thermal Resistance Parameter Unit Junction - soldering point1) 1For 20 K/W calculation of RthJA please refer to Application Note Thermal Resistance 1 Feb-14-2003 BAT66... Electrical Characteristics at T A = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Reverse current VR = 25 V VR = 25 V, TA = 85 °C Forward voltage I F = 10 mA I F = 100 mA IF = 1 A VF 0.28 0.35 0.47 0.35 0.6 IR 10 1000 V Unit A AC Characteristics Diode capacitance VR = 10 V, f = 1 MHz CT - 30 40 pF 2 Feb-14-2003 BAT66... Reverse current IR = (VR) TA = Parameter 10 4 BAT 66-05 EHB00063 Forward current IF = (VF) 10 3 BAT 66-05 EHB00062 ΙR A 10 3 TA = 125 C ΙR mA 10 2 10 2 85 C 10 1 10 1 10 0 TA = 25 C 85 C 10 0 25 C 10 -1 0 10 20 V 30 10 ……
