器件名称: BAT68-03
功能描述: Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high speed switching)
文件大小: 92.17KB 共5页
简 介:BAT 68-03W Silicon Schottky Diode
Preliminary data
For mixer applications in the VHF/UHF range For high speed switching
Type
Marking Ordering Code Q62702Q62702-A1046
Pin Configuration 1=A 2=K
Package SOD-323
BAT 68-03W K
Maximum Ratings Parameter Diode reverse voltage Forward current Total Power dissipation Symbol Values 8 130 150 Unit V mA mW 150 - 65 ... + 150 - 65 ... + 150 °C
VR IF Ptot Tj Top Tstg
TS = 95 °C
Junction temperature Operating temperature range Storage temperature
Thermal Resistance Junction ambient
1)
RthJA RthJS
445 365
K/W
Junction - soldering point
Semiconductor Group
1
Mar-04-1996
BAT 68-03W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit
V(BR)
8 318 390 -
V A 0.1 1.2 mV 340 340 500 pF 1 10
I(BR) = 10 A
Reverse current
IR
VR = 1 V, TA = 25 °C VR = 1 V, TA = 60 °C
Forward voltage
VF
IF = 1 mA IF = 10 mA
Diode capacitance
CT RF
VR = 0 , f = 1 MHz
Differential forward resistance
IF = 5 mA
Forward current IF = f (TA*;TS)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
200 mA
IF
160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 TA ,TS
TA
TS
Semiconductor Group
2
Mar-04-1996
BAT 68-03W
Permissible Pulse Load RTHJS = f(tp)
Permissible Pulse Load IFmax/IFDC = f(tp)
10 3
10 2
K/W
RthJS
10 2
IFmax/IFDC
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0 -7 10
10
-6
10
……