器件名称:
BAT68-06W
功能描述:
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching)
文件大小:
84.71KB 共4页
简 介:
BAT 68W Silicon Schottky Diodes Preliminary data For mixer applications in the VHF/UHF range For high speed switching BAT 68-04W BAT68-05W BAT68-06W Type BAT 68-04W BAT 68-05W BAT 68-06W BAT 68W Marking Ordering Code 84s 85s 86s 83s Q62702Q62702Q62702Q62702- Pin Configuration 1 = A1 1 = A1 1 = K1 1=A 2 = K2 2 = A2 2 = K2 n.c. Package 3 = K1/A2 SOT-323 3 = K1/K2 SOT-323 3 = A1/A2 SOT-323 3=K SOT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, BAT68W Symbol Values 8 130 150 150 150 - 65 ... + 150 - 65 ... + 150 ≤ 435 ≤ 550 ≤ 355 390 K/W °C Unit V mA mW VR IF TS=97°C Ptot Total power dissipation, BAW68-04...06W TS=92°C Ptot Junction temperature Tj Operating temperature range Storage temperature Thermal Resistance Junction - ambient, BAT68W Junction - ambient, BAT68-04W...06W Junctui - soldering point, BAT68W Junction - soldering point, BAT68-04W...06W Top Tstg RthJA RthJA RthJS RthJS Semiconductor Group 1 Dec-20-1996 BAT 68W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit V(BR) 8 318 390 - V A 0.1 1.2 mV 340 340 500 pF 1 10 I(BR) = 100 A Reverse current IR VR = 1 V, TA = 25 °C VR = 1 V, TA = 60 °C Forward voltage VF IF = 1 mA IF = 10 mA Diode capacitance CT RF VR = 1 V, f = 1 MHz Differential forward resistance IF = 5 mA Forward current IF = f (TA*;TS) BAT 68W 200 mA Forward current IF = f (TA*;TS) BAT 68-……
