器件名称: BAT68-07W
功能描述: Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications)
文件大小: 43.15KB 共5页
简 介:BAT 68-07W
Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 68-07W Marking Ordering Code 87 Q62702-A1200 Pin Configuration Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 89 °C Junction temperature Operating temperature range Storage temperature Maximum Ratings Junction - ambient
1)
Symbol
Value 8 130 150 150 -65...+150 - 65 ...+150
Unit V mA mW °C °C °C
VR IF Ptot Tj Top Tstg
RthJA RthJS
≤ 570 ≤ 410
K/W
Junction - soldering point
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm Semiconductor Group Semiconductor Group 11
Sep-09-1998 1998-11-01
BAT 68-07W
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. max. 0.1 1.2 V A nA mV 340 318 390 340 500 Unit
V(BR) IR IR VF
8 -
I (BR) = 10 A
Reverse current
VR = 1 V
Reverse current
VR = 1 V, TA = 60 °C
Forward voltage
I F = 1 mA I F = 10 mA
AC characteristics Diode capacitance
CT rf
-
-
1 10
pF
VR = 1 V, f = 1 MHz
Differential forward resistance
I F = 5 mA, f = 10 kHz
Semiconductor Group Semiconductor Group
22
Sep-09-1998 1998-11-01
BAT 68-07W
Forward current IF = f (TA*;TS) * Package mounted on alumina
140
mA
120 110 100
TS TA
IF
90 80 70 60 50 40 30 ……
