器件名称:
BAT85S
功能描述:
Schottky Barrier Diode
文件大小:
39.36KB 共4页
简 介:
BAT85S Vishay Telefunken Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications Applications where a very low forward voltage is required 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Junction temperature Storage temperature range Test Conditions tp ≤ 10 ms tp≤1s PCB mounting, l=4mm; VRWM=25V, Tamb=50°C Type Symbol VR IFSM IFRM IF IFAV Tj Tstg Value 30 5 300 200 200 125 –65...+150 Unit V A mA mA mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 350 Unit K/W Document Number 85513 Rev. 3, 01-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (4) BAT85S Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V VR=1V, f=1MHz Type Symbol VF VF VF VF VF IR CD Min Typ Max 240 320 400 500 800 2 10 Unit mV mV mV mV mV mA pF Reverse current Diode capacitance Characteristics (Tj = 25_C unless otherwise specified) 200 PR – Reverse Power Dissipation ( mW ) 180 160 140 120 100 80 60 40 20 0 25 15822 1000 VR = 30 V IF – Forward Current ( A ) 100 Tj = 150°C Tj = 25°C 10 RthJA= 540K/W PR–Limit @100%VR PR–Limit @80%VR 1 0.1 50 75 100 125 150 15824 0 0.5 1.0 1.5 Tj – Junction Temperature ( °C ) VF – Forward Voltage ( V ) ……
