器件名称:
BAT86S
功能描述:
Schottky Barrier Diode
文件大小:
39.47KB 共4页
简 介:
BAT86S Vishay Telefunken Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications Applications where a very low forward voltage is required 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Junction temperature Storage temperature range Test Conditions tp ≤ 10 ms tp ≤ 1 s PCB mounting, l=4mm; VRWM=25V, Tamb=50°C Type Symbol VR IFSM IFRM IF IFAV Tj Tstg Value 50 5 500 200 200 125 –65...+150 Unit V A mA mA mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 320 Unit K/W Document Number 85514 Rev. 3, 01-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (4) BAT86S Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=40V VR=1V, f=1MHz Type Symbol VF VF VF VF VF IR CD Min Typ Max 300 380 450 600 900 5 8 Unit mV mV mV mV mV mA pF Reverse current Diode capacitance Characteristics (Tj = 25_C unless otherwise specified) 500 PR – Reverse Power Dissipation ( mW ) 450 400 350 300 250 200 150 100 50 0 25 15827 1000 VR = 50 V IF – Forward Current ( A ) PR–Limit @100%VR 100 Tj = 25°C 10 Tj = 150°C RthJA= 540K/W 1 PR–Limit @80%VR 0.1 50 75 100 125 150 15829 0 0.5 1.0 1.5 Tj – Junction Temperature ( °C ) VF – Forward Voltage ( ……
