器件名称:
BC212BRL1G
功能描述:
Amplifier Transistors PNP Silicon
文件大小:
60.04KB 共4页
简 介:
BC212B Amplifier Transistors PNP Silicon Features These are PbFree Devices* http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 60 5.0 100 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C TO92 CASE 29 STYLE 17 12 2 BASE COLLECTOR 1 3 EMITTER 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, JunctiontoAmbient Thermal Resistance, JunctiontoCase Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W 3 STRAIGHT LEAD BULK PACK 3 BENT LEAD TAPE & REEL AMMO PACK 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM BC 212B AYWW G G A = Assembly Location Y = Year WW = Work Week G = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC212BG BC212BRL1G Package TO92 (PbFree) TO92 (PbFree) Shipping 5000 Units / Bulk 2000 / Tape & Reel *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Refere……
