器件名称:
BC212LB
功能描述:
PNP General Purpose Amplifier
文件大小:
27.31KB 共4页
简 介:
BC212LB BC212LB PNP General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 68. 1 TO-92 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 50 60 5 100 - 55 ~ 150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter IC = 2mA IC = 10A IE = 10A VCB = 30V VEB = 4V VCE = 5V, IC = 10A VCE = 5V, IC = 2mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA VCE = 10V, f = 1MHz VCE = 5V, IC = 2mA, f = 1KHz VCE = 5V, IC = 200A, f = 1KHz RG = 2K, BW = 200Hz 60 10 dB 0.6 40 60 0.6 1.4 0.72 6 V V V pF Test Condition Min. 50 60 5 15 15 Typ. Max. Units V V V nA nA Off Characteristics Collector-Emitter Breakdown Voltage BVCEO BVCBO BVEBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current On Characteristics* hFE DC Current Gain VCE……
