器件名称:
BC237B
功能描述:
Amplifier Transistors(NPN Silicon)
文件大小:
83.65KB 共4页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC237/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC237,A,B,C BC238B,C BC239,C MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC 237 45 50 6.0 BC 238 25 30 5.0 100 350 2.8 1.0 8.0 – 55 to +150 BC 239 25 30 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) Emitter – Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCE = 30 V, VBE = 0) BC237 BC238 BC239 BC237 BC238 BC239 BC238 BC239 BC237 BC238 BC239 BC237 V(BR)CEO 45 25 25 6.0 5.0 5.0 — — — — — — — — — — — — 0.2 0.2 0.2 0.2 0.2 0.2 — — — — — — 15 15 15 4.0 4.0 4.0 A V V(BR)EBO V ICES nA (VCE = 50 V, VBE = 0) (VCE = 30 V, VBE = 0) TA = 125°C (VCE = 50 V, VBE = 0) TA = 125°C REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, ……
