器件名称:
BC238
功能描述:
NPN EPITAXIAL SILICON TRANSISTOR
文件大小:
45.68KB 共4页
简 介:
BC237/238/239 BC237/238/239 Switching and Amplifier Applications Low Noise: BC239 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO VEBO IC PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC237 : BC238/239 : BC237 : BC238/239 : BC237 : BC238/239 1 TO-92 1. Collector 2. Base 3. Emitter Value 50 30 45 25 6 5 100 500 150 -55 ~ 150 Units V V V V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC237 : BC238/239 Emitter Base Breakdown Voltage : BC237 : BC238/239 Collector Cut-off Current : BC237 : BC238/239 DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Base Capacitance Noise Figure : BC237/238 : BC239 : BC239 Test Condition IC=2mA, IB=0 Min. 45 25 6 5 0.2 0.2 120 0.07 0.2 0.73 0.87 0.55 150 0.62 85 250 3.5 8 2 10 4 4 6 15 15 800 0.2 0.6 0.83 1.05 0.7 V V V V V MHz MHz pF pF dB dB dB Typ. Max. Units V V V V nA nA BVEBO IE=1A, IC=0 ICES VCE=50V, VBE=0 VCE=30V, VBE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=3V, IC=0.5mA, f=100MHz VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz VCE=5V, IC=0.2……
