器件名称:
BCR3AM
功能描述:
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
文件大小:
98.45KB 共5页
简 介:
MITSUBISHI SEMICONDUCTOR TRIAC BCR3AM LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3AM OUTLINE DRAWING 10 MAX 4 φ3.2±0.1 TYPE NAME VOLTAGE CLASS Dimensions in mm 0.5 4 MAX 12 MIN 1.2±0.1 0.8 0.8 8 MAX 3.2±0.2 23.7±0.5 2.5 2.5 4.5 MAX 1.5 MIN 0.5 123 1.55±0.1 Measurement point of case temperature IT (RMS) ........................................................................ 3A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ......................... 30mA (15mA) V6 APPLICATION Contactless AC switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications 10 MAX 24 1 2 3 34 1 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-202 MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc =86°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current ……
