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Parameter参数

Symbol符号

Rating数值

Unit单位

输入侧

Forward current正向电流

IF

50

mA

*1Peak forward current峰值正向电流

IFM

1

A

Reverse voltage反向电压

VR

6

V

Power dissipation功耗

P

70

mW

输出侧

Collector-emitter voltage集电极发射极电压

V CEO

35

V

Emitter-collector voltage发射极集电极电压

V ECO

6

V

Collector current集电极电流

IC

50

mA

Collector power dissipation集电极功耗

PC

150

mW

Total power dissipation总功耗

P tot

200

mW

*2Isolation voltage隔离电压

V iso

5 000

Vrms

Operating temperature操作温度

T opr

-30 to + 100

℃

Storage temperature存储温度

T stg

-55 to + 125

℃

*3Soldering temperature焊接温度

T sol

260

℃

Parameter参数

Symbol符号

Conditions测试条件

数值

最小

典型

最大

典型

输入侧

Forward voltage正向电压

V F

IF = 20mA

-

1.2

1.4

V

Peak forward voltage正向峰值电压

V FM

IFM = 0.5A

-

-

3.0

V

Reverse current反向电流

IR

VR =4V

-

-

10

μA

Terminal capacitance终端电容

Ct

V = 0, f = 1kHz

-

30

250

pF

输出侧

Collector dark current集电极暗电流

ICEO

VCE = 20V

-

-

10-7

A

Transfer charac-teristics传输特点

*4Current transfer ratio电流传输比

CTR

IF = 5mA, V CE = 5V

50

-

600

%

Collector-emitter saturation voltage集电极发射极饱和电压

V CE(sat)

IF = 20mA, I C = 1mA

-

0.1

0.2

V

Isolation resistance隔离电阻

R ISO

DC500V, 40 to 60% RH

5x1010

1011

-

Ω

Floating capacitance浮动电容

Cf

V = 0, f = 1MHz

-

0.6

1.0

pF

Cut-off frequency截止频率

fc

VCE = 5V, I C = 2mA, R L = 100 W, -3dB

-

80

-

kHz

Response time响应时间

Rise time上升时间

tr

VCE = 2V, I C = 2mA, R L = 100 W

-

4

18

μs

Fall time下降时间

tf

-

3

18

μs

Model No.型号

Rank mark等级标志

电流传输比CTR ( % )

PC817A

A

80 to 160

PC817B

B

130 to 260

PC817C

C

200 to 400

PC817D

D

300 to 600

PC8 * 7AB

A或B

80 to 260

PC8 * 7BC

B或C

130 to 400

PC8 * 7CD

C或D

200 to 600

PC8 * 7AC

A, B或C

80 to 400

PC8 * 7BD

B, C或D

130 to 600

PC8 * 7AD

A, B, C或D

80 to 600

PC8 * 7

A, B, C, D或 无标记

50 to 600