射频CMOS集成电路原理和设计-4

射频CMOS集成电路原理和设计-4
CMOS8¤>nO Lecture 3, Sept. 28, 2003
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1. Introduction
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2. DC characteristics
3. MOS capacitances (dynamic elements)
4. High-frequency FoM: ωT and ωmax
5. Mobility and other issues
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1. Chs. 3, 2 of Thomas Lee’s book
2. 1n§8¤>N|+§]§/CMOS8
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Introduction
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The discussion of semiconductor device models in this lecture focuses
on those aspects of transistor behavior that are of immediate relevance
to the RF circuit designers.
DC Characteristics
Linear region 3/14

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