资料介绍
PCM技术基础
白皮书
相变存储器技术
相变存储器(PCM)技术基础
一种新型非易失性存储器
Technology
技术和能力and capabilities
历史和背景
操作理论
PCM属性和容量
结论
院子
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1. S.R. Ovshinksy, “Reversible Electrical Switching Phenomenon in Disordered Structures”, Physics Review Letters, vol. 21, p1450, 1968.
2. R. G. Neale, D. L. Nelson, G. E. Moore, “Nonvolatile and Reprogramable, the Read-Mostly Memory is Here”, Electronics, September, 1970, p56
2
1. R. Baumann, “Soft Errors in Advanced Computer Systems”, IEEE Design and Test of Computers, Volume 22, Issue 3, May-June 2