Low Power Silicon BJT LNA for 1.9GHz

Abstract: A two-stage 1.9GHz monolithic low-noise amplifier (LNA) with a measured noise figure of 2.3dB and an associated gain of 15dB was fabricated in a standard silicon bipolar transistor array. It dissipates 5.2mW from a 3V supply including the bias circuitry. Input return loss and isolation are -9dB and -20dB, respectively.
Maxim > App Notes > ASICs WIRELESS, RF, AND CABLE

Keywords: Maxim, QuickChip, silicon bipolar, LNA, 1.9 GHz, QuickChip 9, semi-custom, ASIC, low noise Mar 17, 2000
amplifier, quick chip

APPLICATION NOTE 644
QuickChip Design Example 2
Low Power Silicon BJT LNA for 1.9GHz

Abstract: A two-stage 1.9GHz monolithic low-noise amplifier (LNA) with a measured noise figure of 2.3dB and
an associated gain of 15dB was fabricated in a standard silicon bipolar transistor array. It dissipates 5.2mW
from a 3V supply including the bias circuitry. Input return loss and isolation are -9dB and -20dB, respectively.


1998 IEEE. Reprinted, with permission, from 1998 IEEE Microwave and Guided Wave Letters, Vol. 3, No. 3,
pp. 136-137


I. Introduction

In portable communication equipment, such as cellular